Heisener Electronics
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FDB12N50UTM_WS_1

500V|10A (Tc)|165W (Tc)
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MOSFET N-CH 500V 10A D2PAK

Specifications

Brand
ON Semiconductor
Package
D²PAK
Packaging
—
Weight
—

Total Inventory

275pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB12N50UTM_WS_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesFRFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1395pF @ 25V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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