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100V|200A (Tc)|3.8W (Ta), 250W (Tc)
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MOSFET N-CH 100V 200A D2PAK
Specifications
- Brand
- ON Semiconductor
- Package
- TO-263-7
- Packaging
- —
- Weight
- —
Total Inventory
497pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDB0260N1007L_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 27A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8545pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263-7 | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
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Datasheet & Documents
fdb0260n1007l.pdf
PDF Document · 8 pages
