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FDB024N08BL7_1

80V|120A (Tc)|246W (Tc)
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MOSFET N-CH 80V 120A D2PAK7

Specifications

Brand
ON Semiconductor
Package
TO-263-7
Packaging
—
Weight
—

Total Inventory

4,293pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB024N08BL7_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs178nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13530pF @ 40V
FET Feature-
Power Dissipation (Max)246W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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Datasheet & Documents

fdb024n08bl7.pdf

PDF Document · 11 pages

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