Heisener Electronics
BOM

FDB0165N807L

80V|310A (Tc)|3.8W (Ta), 300W (Tc)
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MOSFET N-CH 80V 310A TO263

Specifications

Brand
Fairchild/ON Semiconductor
Package
D2PAK (TO-263)
Packaging
—
Weight
—

Total Inventory

6,256pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FDB0165N807L from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesPowerTrench?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C310A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs304nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds23660pF @ 40V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263)
Package / CaseTO-263-7, D2Pak (6 Leads + Tab)

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Datasheet & Documents

fdb0165n807l.pdf

PDF Document · 8 pages

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