Contact
Send MessageFCP7N60_F080_1
600V|7A (Tc)|83W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 600V 7A TO-220
Specifications
- Brand
- ON Semiconductor
- Package
- TO-220-3
- Packaging
- —
- Weight
- —
Total Inventory
263pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FCP7N60_F080_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | SuperFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 83W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220-3 | |
| Package / Case | TO-220-3 |
Recommended Products
RES SMD 1M OHM 5% 1/2W 1206
IM-1 2.7 10% B08
MEMS OSC XO 28.63636MHZ H/LVCMOS
CAP CER 6.2PF 150V 0505
CPS16-NO00A10-SNCCWTWF-AI0GBVAR-W1053-S
SWITCH PUSH SPST-NO 100MA 42V
DC DC CONVERTER 36V 50W
IC REG LIN 1.85V/1.85V 10DFN
IC AMP MESFET GAAS CATV 16-SOP
CONN PLUG HSNG MALE 2POS INLINE
CONN EDGE DUAL FMALE 62POS 0.100
Datasheet & Documents
fcp7n60_f080.pdf
PDF Document · 12 pages
