FCP650N80Z_1
800V|10A (Tc)|162W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET N-CH 800V 10A
规格参数
- 品牌
- ON Semiconductor
- 封装
- TO-220
- 包装方式
- —
库存总量
1,232个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 ON Semiconductor 的 FCP650N80Z_1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | ON Semiconductor | |
| Series | SuperFET® II | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 800µA | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1565pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 162W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220 | |
| Package / Case | TO-220-3 |
推荐产品
RES SMD 1% 1W MELF
MEMS OSC PROG VCXO LVCMOS 1.8V
CAP CER 2000PF 20KV R85 DISK
CAP TANT 1.5UF 10% 4V 0603
SWITCH PUSHBUTTON SPST-NO 2A 48V
DC DC CONVERTER 3.3V 99W
IC SRAM 9M PARALLEL 256CABGA
CONN BASE SIDE ENTRY SZ4 M20
CIRCULAR
AB 3C 3#16 PIN PLUG
数据手册与文档
fcp650n80z.pdf
PDF文档 · 10 pages
