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FCP150N65F

650V|24A (Tc)|298W (Tc)
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MOSFET N-CH 650V 24A TO220

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

4,560pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FCP150N65F from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesHiPerFET?, Polar?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3737pF @ 100V
FET Feature-
Power Dissipation (Max)298W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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Datasheet & Documents

fcp150n65f.pdf

PDF Document · 12 pages

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