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FCP125N60E

600V|29A (Tc)|278W (Tc)
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MOSFET N-CH 600V 29A TO220

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-220
Packaging
—
Weight
—

Total Inventory

15,624pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FCP125N60E from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesSuperFET? II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125 mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2990pF @ 380V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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Datasheet & Documents

fcp125n60e.pdf

PDF Document · 10 pages

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