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FCI11N60

600V|11A (Tc)|125W (Tc)
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MOSFET N-CH 600V 11A I2PAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
I2PAK
Packaging
—
Weight
—

Total Inventory

15,300pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FCI11N60 from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerFairchild/ON Semiconductor
SeriesSuperFET?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

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Datasheet & Documents

fci11n60.pdf

PDF Document · 8 pages

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Datasheet Preview

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