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FCD5N60TM-WS

600V|4.6A (Tc)|54W (Tc)
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MOSFET N-CH 600V 4.6A DPAK

Specifications

Brand
ON Semiconductor
Package
D-Pak
Packaging
—
Weight
—

Total Inventory

6,353pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FCD5N60TM-WS from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesSuperFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fcd5n60tf.pdf

PDF Document · 8 pages

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