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FCD260N65S3

650V|12A (Tc)|90W (Tc)
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MOSFET N-CH 260MOHM TO252

Specifications

Brand
ON Semiconductor
Package
TO-252, (D-Pak)
Packaging
—
Weight
—

Total Inventory

318pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how FCD260N65S3 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs260mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1010pF @ 400V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

fcd260n65s3.pdf

PDF Document · 10 pages

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