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800 V|1A
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DIODE GEN PURP 800V 1A TS-1
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- T-18, Axial
- Packaging
- —
- Weight
- —
Total Inventory
15,000pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how F1T6G from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 800 V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 500 ns | |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V | |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | T-18, Axial | |
| Supplier Device Package | TS-1 | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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