黑森尔电子
BOM

ES1BL-M2G_1

100V|1A
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DIODE GEN PURP 100V 1A SUB SMA

规格参数

品牌
Taiwan Semiconductor Corporation
封装
DO-219AB
包装方式
—

库存总量

497个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 Taiwan Semiconductor Corporation 的 ES1BL-M2G_1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

  • 原厂采购,全程可追溯
  • 严格的进料品质检验
  • 具竞争力的价格 & 全球快速交货
  • 专属应用工程技术支持

技术规格

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If950mV @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35ns
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F10pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageSub SMA
Operating Temperature - Junction-55°C ~ 150°C

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