Heisener Electronics
BOM

ES1AL-MHG_1

50V|1A
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DIODE GEN PURP 50V 1A SUB SMA

Specifications

Brand
Taiwan Semiconductor Corporation
Package
DO-219AB
Packaging
—
Weight
—

Total Inventory

348pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ES1AL-MHG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)50V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If950mV @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35ns
Current - Reverse Leakage @ Vr5µA @ 50V
Capacitance @ Vr, F10pF @ 1V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageSub SMA
Operating Temperature - Junction-55°C ~ 150°C

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