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100V|1.2A
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DIODE GEN PURP 100V 1.2A DO219AB
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- DO-219AB
- Packaging
- —
- Weight
- —
Total Inventory
112pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ES07B-GS18 from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Current - Average Rectified (Io) | 1.2A | |
| Voltage - Forward (Vf) (Max) @ If | 980mV @ 1A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 25ns | |
| Current - Reverse Leakage @ Vr | 10µA @ 100V | |
| Capacitance @ Vr, F | 4pF @ 4V, 50MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-219AB | |
| Supplier Device Package | DO-219AB (SMF) | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Datasheet & Documents
es07b-gs18.pdf
PDF Document · 6 pages
