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50V|100mA|500mW
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TRANS PREBIAS NPN/PNP SOT563
Specifications
- Brand
- ON Semiconductor
- Package
- SOT-563, SOT-666
- Packaging
- —
- Weight
- —
Total Inventory
476pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how EMD4DXV6T1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 47kOhms, 10kOhms | |
| Resistor - Emitter Base (R2) | 47kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 500mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | SOT-563 |
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Datasheet & Documents
nsvemd4dxv6t5g.pdf
PDF Document · 5 pages
