Heisener Electronics
BOM

EDFP112A3PB-GDTJ-F-R-TR

1.14V ~ 1.95V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IC DRAM 24G PARALLEL 800MHZ

Specifications

Brand
Micron Technology Inc.
Package
-
Packaging
—
Weight
—

Total Inventory

273pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EDFP112A3PB-GDTJ-F-R-TR from Micron Technology Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicron Technology Inc.
Series-
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR3
Memory Size24Gb (192M x 128)
Memory InterfaceParallel
Clock Frequency800MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.14V ~ 1.95V
Operating Temperature-30°C ~ 105°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package-

Recommended Products

SIT8209AC-G3-28S-148-351648T

SIT8209AC-G3-28S-148-351648T

MEMS OSC XO 148.351648MHZ LVCMOS

SIT1602BI-23-18N-7-372800D

SIT1602BI-23-18N-7-372800D

MEMS OSC XO 7.3728MHZ H/LV-CMOS

CDR33BP152BJMPAR

CDR33BP152BJMPAR

CAP CER 1500PF 100V BP 1210

SN74ACT374PWR

SN74ACT374PWR

IC FF D-TYPE SNGL 8BIT 20TSSOP

ZEN132V260A16YC

ZEN132V260A16YC

POLYZEN PPTC/ZENER SMD

V33ZT1

V33ZT1

VARISTOR 33V 250A DISC 7MM

39808000000

39808000000

FUSE BRD MNT 800MA 65VAC/VDC RAD

ESQ-107-49-S-T-LL

ESQ-107-49-S-T-LL

ELEVATED SOCKET STRIPS

KJB7T21F41JN

KJB7T21F41JN

CONN RCPT 41POS JAM NUT SKT

CA3108F14S-6SB01

CA3108F14S-6SB01

CONN PLUG 6POS RT ANG W/SKTS