Heisener Electronics
BOM

EDF8164A3MA-GD-F-R-TR

1.14V ~ 1.95V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IC DRAM 8G PARALLEL 800MHZ

Specifications

Brand
Micron Technology Inc.
Package
-
Packaging
—
Weight
—

Total Inventory

393pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EDF8164A3MA-GD-F-R-TR from Micron Technology Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicron Technology Inc.
Series-
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR3
Memory Size8Gb (128M x 64)
Memory InterfaceParallel
Clock Frequency800MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.14V ~ 1.95V
Operating Temperature-30°C ~ 85°C (TC)
Mounting Type-
Package / Case-
Supplier Device Package253-FBGA (11x11)

Recommended Products

1206Y0505P60DFR

1206Y0505P60DFR

CAP CER 5.6PF 50V C0G/NP0 1206

C323C169CAG5TA7301

C323C169CAG5TA7301

CAP CER 1.6PF 250V C0G/NP0 RAD

VE-BW3-EW-S

VE-BW3-EW-S

DC DC CONVERTER 24V 100W

SS2P3HE3-84A

SS2P3HE3-84A

DIODE SCHOTTKY 30V 2A DO220AA

1953210000

1953210000

LMZF 10/11/135 3.5SW

68735-413HLF

68735-413HLF

HEADER BERGSTIK

1-2029265-6

1-2029265-6

CONN HEADER 16POS VERT 4.2MM TIN

6-5227079-8

6-5227079-8

CONN BNC PLUG STR 50 OHM CRIMP

HMM28DSEH-S13

HMM28DSEH-S13

CONN EDGE DUAL FMALE 56POS 0.156

EBA44DTMS

EBA44DTMS

CONN EDGE DUAL FMALE 88POS 0.125