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ECH8310-TL-H

30V|9A (Ta)|1.5W (Ta)
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MOSFET P-CH 30V 9A ECH8

Specifications

Brand
ON Semiconductor
Package
8-ECH
Packaging
—
Weight
—

Total Inventory

495pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ECH8310-TL-H from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs17mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-ECH
Package / Case8-SMD, Flat Lead

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Datasheet & Documents

ech8310-tl-h.pdf

PDF Document · 5 pages

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