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4500 V|3410A
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DIODE GEN PURP 4.5KV 3410A W111
Specifications
- Brand
- IXYS
- Package
- DO-200AE
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how E3000EC45E from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 4500 V | |
| Current - Average Rectified (Io) | 3410A | |
| Voltage - Forward (Vf) (Max) @ If | 3.1 V @ 3000 A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 1.25 µs | |
| Current - Reverse Leakage @ Vr | 90 mA @ 4500 V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | DO-200AE | |
| Supplier Device Package | W111 | |
| Operating Temperature - Junction | -40°C ~ 140°C |
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