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60 V|4 A|1.8 W
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TRANS NPN 60V 4A 3DFN
Specifications
- Brand
- Diodes Incorporated
- Package
- 3-UDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
1,293pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DXTN10060DFJBWQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 4 A | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A | |
| Current - Collector Cutoff (Max) | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 340 @ 200mA, 2V | |
| Power - Max | 1.8 W | |
| Frequency - Transition | 125MHz | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-UDFN Exposed Pad | |
| Supplier Device Package | W-DFN2020-3 (Type A) |
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