Heisener Electronics
BOM

DXTN10060DFJBQ-7

60 V|4 A|1.8 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 60V 4A 3DFN

Specifications

Brand
Diodes Incorporated
Package
3-UDFN Exposed Pad
Packaging
—
Weight
—

Total Inventory

3,837pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DXTN10060DFJBQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic320mV @ 200mA, 4A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce340 @ 200mA, 2V
Power - Max1.8 W
Frequency - Transition125MHz
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case3-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-3 (Type B)

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