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100V|3A|1.47W
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SS Low Sat Transistor PowerDI506
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-PowerTDFN
- Packaging
- —
- Weight
- —
Total Inventory
7,500pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DXTC3C100PDQ-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| Transistor Type | 1 NPN, 1 PNP | |
| Current - Collector (Ic) (Max) | 3A | |
| Voltage - Collector Emitter Breakdown (Max) | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 330mV @ 300mA, 3A / 325mV @ 200mA, 2A | |
| Current - Collector Cutoff (Max) | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 10V / 170 @ 500mA, 10V | |
| Power - Max | 1.47W | |
| Frequency - Transition | 130MHz, 100MHz | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PowerDI5060-8 (Type UXD) |
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