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12 V|500 mA|150 mW
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TRANS PREBIAS NPN 12V 0.5A EMT3
Specifications
- Brand
- Rohm Semiconductor
- Package
- SC-75, SOT-416
- Packaging
- —
- Weight
- —
Total Inventory
8,862pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DTD543EE3TL from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased + Diode | |
| Current - Collector (Ic) (Max) | 500 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 12 V | |
| Resistor - Base (R1) | - | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 115 @ 100mA, 2V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | 260 MHz | |
| Power - Max | 150 mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 | |
| Supplier Device Package | EMT3 |
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