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Send MessageDSS4160FDBQ-7
60V|1A|405mW
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SS Low Sat Transistor U-DFN2020-
Specifications
- Brand
- Diodes Incorporated
- Package
- 6-UDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
9,000pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DSS4160FDBQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| Transistor Type | 2 NPN (Dual) | |
| Current - Collector (Ic) (Max) | 1A | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 50mA, 1A | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 290 @ 100mA, 2V | |
| Power - Max | 405mW | |
| Frequency - Transition | 175MHz | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Supplier Device Package | U-DFN2020-6 (Type B) |
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