Heisener Electronics
BOM

DN3535N8-G

350V|230mA (Tj)|1.6W (Ta)
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MOSFET N-CH 350V 0.23A SOT89-3

Specifications

Brand
Microchip Technology
Package
TO-243AA (SOT-89)
Packaging
—
Weight
—

Total Inventory

2,745pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DN3535N8-G from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)350V
Current - Continuous Drain (Id) @ 25°C230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs10Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-243AA (SOT-89)
Package / CaseTO-243AA

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