Heisener Electronics
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DMTH8008SFGQ-7

80 V|17A (Ta), 68A (Tc)|1.2W (Ta), 50W (Tc)
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MOSFET BVDSS: 61V~100V POWERDI33

Specifications

Brand
Diodes Incorporated
Package
POWERDI3333-8
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMTH8008SFGQ-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs31.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1945 pF @ 40 V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePOWERDI3333-8
Package / Case8-PowerVDFN

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