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60 V|17.2A (Ta), 100A (Tc)|2.88W (Ta), 100W (Tc)
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MOSFET N-CH 60V 17.2A/100A PWRDI
Specifications
- Brand
- Diodes Incorporated
- Package
- PowerDI5060-8 (Type Q)
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMTH6006LPSW-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta), 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 34.9 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2162 pF @ 30 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.88W (Ta), 100W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerDI5060-8 (Type Q) | |
| Package / Case | 8-PowerTDFN |
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