Contact

DMTH6005LFG-13

60 V|19.7A (Ta), 100A (Tc)|2.38W (Ta), 75W (Tc)

OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 60V 19.7A/100A PWRDI

Specifications

Brand: Diodes Incorporated
Package: POWERDI3333-8
Packaging: —
Weight: —

Total Inventory

0pcs

Ship within 8 hours

Purchase Quantity

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMTH6005LFG-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

Authentic sourcing with full traceability
Rigorous incoming quality inspection
Competitive pricing & global fast delivery
Dedicated application engineering support

Manufacturer	Diodes Incorporated
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	19.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3150 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.38W (Ta), 75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	POWERDI3333-8
Package / Case	8-PowerVDFN

Contact

DMTH6005LFG-13

Specifications

Total Inventory

Certifications & Authorizations

Product Video

Technical Specifications

Recommended Products

Similar Products

Recommended for You