Heisener Electronics
BOM

DMTH10H032LPDWQ-13

100V|24A (Tc)|3W (Ta), 37W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 100V 24A POWERDI50

Specifications

Brand
Diodes Incorporated
Package
8-PowerTDFN
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMTH10H032LPDWQ-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeMOSFET (Metal Oxide)
FET Feature-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds683pF @ 50V
Power - Max3W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UXD)

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