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100V|13A (Ta), 59A (Tc)|1.5W (Ta), 93W (Tc)
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MOSFET 2N-CH 100V 13A PWRDI50
Specifications
- Brand
- Diodes Incorporated
- Package
- 8-PowerTDFN
- Packaging
- —
- Weight
- —
Total Inventory
7,500pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMTH10H017LPDQ-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | MOSFET (Metal Oxide) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 59A (Tc) | |
| Rds On (Max) @ Id, Vgs | 17.4mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 28.6nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1986pF @ 50V | |
| Power - Max | 1.5W (Ta), 93W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PowerDI5060-8 (Type E) |
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