Heisener Electronics
BOM

DMTH10H010SCT

100V|100A (Ta)|2.5W (Ta), 187W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 61V-100V TO220AB T

Specifications

Brand
Diodes Incorporated
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

471pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMTH10H010SCT from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4468pF @ 50V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 187W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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