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115 V|3.4A (Ta)|900mW (Ta)
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MOSFET N-CH 115V 3.4A 6DFN
Specifications
- Brand
- Diodes Incorporated
- Package
- X2-DFN2020-6
- Packaging
- —
- Weight
- —
Total Inventory
9,000pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMT12H090LFDF4-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 115 V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 251 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 900mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | X2-DFN2020-6 | |
| Package / Case | 6-PowerXDFN |
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