Heisener Electronics
BOM

DMT12H065LFDF-7

115 V|4.3A (Ta)|1W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 115V 4.3A 6UDFN

Specifications

Brand
Diodes Incorporated
Package
U-DFN2020-6 (Type F)
Packaging
—
Weight
—

Total Inventory

9,777pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMT12H065LFDF-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)115 V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds252 pF @ 50 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type F)
Package / Case6-UDFN Exposed Pad

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