Heisener Electronics
BOM

DMT10H025SK3-13

100V|41.2A (Tc)|1.4W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 61V-100V TO252 T&R

Specifications

Brand
Diodes Incorporated
Package
TO-252, (D-Pak)
Packaging
—
Weight
—

Total Inventory

401pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMT10H025SK3-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C41.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1544pF @ 50V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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