Heisener Electronics
BOM

DMP26M1UPSW-13

20 V|83A (Tc)|1.9W (Ta), 2.6W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 8V~24V PowerDI5060

Specifications

Brand
Diodes Incorporated
Package
PowerDI5060-8 (Type UX)
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMP26M1UPSW-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs164 nC @ 10 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds5392 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 2.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI5060-8 (Type UX)
Package / Case8-PowerTDFN

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