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20V|600mA (Ta)|400mW
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MOSFETP-CHAN 20V X1-DFN1212-3
Specifications
- Brand
- Diodes Incorporated
- Package
- X1-DFN1212-3
- Packaging
- —
- Weight
- —
Total Inventory
303pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMP21D6UFD-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 100mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 8V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 46.1pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 400mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | X1-DFN1212-3 | |
| Package / Case | 3-UDFN |
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Datasheet & Documents
dmp21d6ufd-7.pdf
PDF Document · 4 pages
