Heisener Electronics
BOM

DMP2016UFDF-7

20 V|9.5A (Ta)|900mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 8V~24V U-DFN2020-6

Specifications

Brand
Diodes Incorporated
Package
U-DFN2020-6 (Type F)
Packaging
—
Weight
—

Total Inventory

9,000pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMP2016UFDF-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs15mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1710 pF @ 10 V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type F)
Package / Case6-UDFN Exposed Pad

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