Heisener Electronics
BOM

DMNH6069SFVWQ-13

60 V|5A (Ta), 18A (Tc)|3W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 41V~60V POWERDI333

Specifications

Brand
Diodes Incorporated
Package
PowerDI3333-8 (SWP) Type UX
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMNH6069SFVWQ-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 30 V
FET Feature-
Power Dissipation (Max)3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Package / Case8-PowerVDFN

Recommended Products

TB-14-31818MBD-T

TB-14-31818MBD-T

MEMS OSC XO 14.31818MHZ CMOS SMD

SIT1602BI-73-25E-35-840000G

SIT1602BI-73-25E-35-840000G

MEMS OSC XO 35.8400MHZ H/LV-CMOS

1812J2K00680GCR

1812J2K00680GCR

CAP CER 68PF 2KV C0G/NP0 1812

1808Y0500821KDR

1808Y0500821KDR

CAP CER 820PF 50V X7R 1808

C1210C225M3RACTU

C1210C225M3RACTU

CAP CER 2.2UF 25V X7R 1210

REC10-2412DZ-H2-M

REC10-2412DZ-H2-M

DC DC CONVERTER +/-12V 10W

SY10EL16VFKC-TR

SY10EL16VFKC-TR

IC RCVR DIFF 5V/3.3V 8-MSOP

1231750000

1231750000

TERM BLOCK PLUG 11POS STR 3.81MM

ASM40DRMN

ASM40DRMN

CONN EDGE DUAL FMALE 80POS 0.156