Heisener Electronics
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DMN90H2D2HCTI

900V|6A (Tc)|40W (Tc)
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MOSFET N-CH 900V 6A ITO220AB

Specifications

Brand
Diodes Incorporated
Package
ITO-220AB
Packaging
—
Weight
—

Total Inventory

316pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN90H2D2HCTI from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1487pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

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Datasheet & Documents

dmn90h2d2hcti.pdf

PDF Document · 7 pages

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