Heisener Electronics
BOM

DMN66D0LDWQ-13

60V|217mA (Ta)|400mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 60V 0.217A SOT363

Specifications

Brand
Diodes Incorporated
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN66D0LDWQ-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeMOSFET (Metal Oxide)
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C217mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds29.3pF @ 25V
Power - Max400mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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