Heisener Electronics
BOM

DMN65D8LDW-7

60V|180mA|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 60V 0.18A SOT363

Specifications

Brand
Diodes Incorporated
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

269,052pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN65D8LDW-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180mA
Rds On (Max) @ Id, Vgs6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds22pF @ 25V
Power - Max300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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Datasheet & Documents

dmn65d8ldw-7.pdf

PDF Document · 6 pages

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