Heisener Electronics
BOM

DMN63D8LDW-13

30V|220mA|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 30V 0.22A SOT363

Specifications

Brand
Diodes Incorporated
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

155pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN63D8LDW-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C220mA
Rds On (Max) @ Id, Vgs2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs870nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds22pF @ 25V
Power - Max300mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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Datasheet & Documents

dmn63d8ldw-13.pdf

PDF Document · 6 pages

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