Heisener Electronics
BOM

DMN6069SFVW-7

60 V|4A (Ta), 14A (Tc)|2.5W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET BVDSS: 41V~60V POWERDI333

Specifications

Brand
Diodes Incorporated
Package
PowerDI3333-8 (SWP) Type UX
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN6069SFVW-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C4A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs69mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Package / Case8-PowerVDFN

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