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DMN6069SFGQ-7

60V|18A (Tc)|2.4W
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MOSFET N-CH 60V 18A POWERDI3333

规格参数

品牌
Diodes Incorporated
封装
PowerDI3333-8
包装方式
—

库存总量

361个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 Diodes Incorporated 的 DMN6069SFGQ-7 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

  • 原厂采购,全程可追溯
  • 严格的进料品质检验
  • 具竞争力的价格 & 全球快速交货
  • 专属应用工程技术支持

技术规格

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1480pF @ 30V
FET Feature-
Power Dissipation (Max)2.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

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数据手册与文档

dmn6069sfgq-7.pdf

PDF文档 · 8 pages

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