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DMN55D0UT-7

50V|160mA (Ta)|200mW (Ta)
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MOSFET N-CH 50V 160MA SOT-523

Specifications

Brand
Diodes Incorporated
Package
SOT-523
Packaging
—
Weight
—

Total Inventory

394pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN55D0UT-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Rds On (Max) @ Id, Vgs4Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds25pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-523
Package / CaseSOT-523

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Datasheet & Documents

dmn55d0ut-7.pdf

PDF Document · 7 pages

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