Heisener Electronics
BOM

DMN4800LSS-13

30V|9A (Ta)|1.46W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 9A 8SOP

Specifications

Brand
Diodes Incorporated
Package
8-SOP
Packaging
—
Weight
—

Total Inventory

17,971pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN4800LSS-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.47nC @ 5V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds798pF @ 10V
FET Feature-
Power Dissipation (Max)1.46W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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Datasheet & Documents

dmn4800lss-13.pdf

PDF Document · 6 pages

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