Heisener Electronics
BOM

DMN33D8LT-13

30V|115mA (Ta)|240mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V 0.115A

Specifications

Brand
Diodes Incorporated
Package
SOT-523
Packaging
—
Weight
—

Total Inventory

228pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how DMN33D8LT-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Rds On (Max) @ Id, Vgs5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs0.55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds48pF @ 5V
FET Feature-
Power Dissipation (Max)240mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-523
Package / CaseSOT-523

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Datasheet & Documents

dmn33d8lt-7.pdf

PDF Document · 5 pages

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