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30V|1A|320mW
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MOSFET 2N-CH 30V 1A SOT363
Specifications
- Brand
- Diodes Incorporated
- Package
- 6-TSSOP, SC-88, SOT-363
- Packaging
- —
- Weight
- —
Total Inventory
102,445pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN3190LDW-13 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 1A | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 1.3A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 20V | |
| Power - Max | 320mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | SOT-363 |
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Datasheet & Documents
dmn3190ldw-7.pdf
PDF Document · 5 pages
