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30V|3.2A (Ta)|1.38W
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MOSFET N-CH 30V 3.2A X2DFN1006-3
Specifications
- Brand
- Diodes Incorporated
- Package
- X2-DFN1006-3
- Packaging
- —
- Weight
- —
Total Inventory
300pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMN3110LCP3-7 from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V | |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 500mA, 8V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.52nC @ 4.5V | |
| Vgs (Max) | 12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.38W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | X2-DFN1006-3 | |
| Package / Case | 3-XFDFN |
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Datasheet & Documents
dmn3110lcp3-7.pdf
PDF Document · 7 pages
